preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10v drive v dss ................................................................................ 350v r ds (on) (max) ................................................................ 0.4 w i d ............................................................................................ 7a v iso ................................................................................ 2000v 350 30 12 36 12 35 C55 ~ +150 C55 ~ +150 2000 2.0 v v a a a w c c v g mitsubishi power mosfet FL12KM-7A high-speed switching use nch power mosfet FL12KM-7A application inverter type fluorescent light sets, smps to-220fn outline drawing dimensions in mm 15 0.3 14 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 a a gate drain a source v gs = 0v v ds = 0v l = 200 m h ac for 1minute, terminal to case typical value parameter conditions symbol ratings unit v dss v gss i d i dm i da p d t ch t stg v iso drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight maximum ratings (tc = 25 c)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL12KM-7A high-speed switching use nch power mosfet i d = 1ma, v gs = 0v i gs = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 350v, v gs = 0v i d = 1ma, v ds = 10v i d = 6a, v gs = 10v i d = 6a, v gs = 10v i d = 6a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 6a, v gs = 10v, r gen = r gs = 50 w i s = 6a, v gs = 0v channel to case v v m a ma v w v s pf pf pf ns ns ns ns v c/w 350 30 2.0 3.0 0.32 1.90 10 1050 150 25 20 30 160 60 1.5 10 1.0 4.0 0.40 2.40 2.0 3.57 0 4 8 12 16 20 0 4 8 12 16 20 4v 5v v gs =20v,10v,8v,6v p d = 35w tc = 25 c pulse test output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 2 4 6 8 10 0246810 v gs = 20v,10v,8v,6v output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) tc = 25 c pulse test 5v p d = 35w 4v 10 1 10 0 2 3 5 7 2 3 5 7 2 10 1 357 2 10 2 357 2 2 10 3 357 7 10 1 2 3 5 7 tw = 10 m s t c = 25 c single pulse 100 m s 100ms 10ms 1ms dc maximum safe operating area drain-source voltage v ds (v) drain current i d (a) 0 10 20 30 40 50 0 200 50 100 150 power dissipation derating curve case temperature t c ( c) power dissipation p d (w) symbol parameter test conditions limits min. typ. max. unit v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance electrical characteristics (tch = 25 c) performance curves
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL12KM-7A high-speed switching use nch power mosfet 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25 c 75 c 125 c v ds =10v pulse test 0 4 8 12 16 20 0 4 8 12 16 20 tc = 25 c v ds = 10v pulse test 0 0.2 0.4 0.6 0.8 1.0 10 -1 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 20v tc = 25 c pulse test 10v 0 4 8 12 16 20 0 4 8 12 16 20 tc = 25 c pulse test i d = 24a 12a 6a 10 0 2 10 1 357 2 10 2 357 10 3 57 23 10 1 3 5 7 2 3 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c f = 1mh z v gs = 0v 10 0 10 1 23457 10 2 23457 10 1 10 2 5 2 3 7 5 2 3 5 7 t d(off) t d(on) t r tch = 25 c v gs = 10v v dd = 150v r gen = r gs = 50 w t f on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) on-state resistance vs. drain current (typical) drain current i d (a) gate-source voltage v gs (v) forward transfer admittance vs.drain current (typical) transfer characteristics (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) switching characteristics (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state voltage v ds (on) (v) drain-source on-state resistance r ds (on) ( w ) drain current i d (a)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL12KM-7A high-speed switching use nch power mosfet 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? d = 1.0 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 10v i d = 6a pulse test 0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 125 c t c = 75 c 25 c v gs = 0v pulse test 0 4 8 12 16 20 0 20406080100 50v v ds = 100v 200v tch = 25 c i d =12a gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) threshold voltage vs. channel temperature (typical) on-state resistance vs. channel temperature (typical) channel temperature tch ( c) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-c) ( c/w) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) p dm tw d = t tw t
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